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Ordering number : EISB*0008
Ultrathin Miniature Package
ISB-A40-0
Overview
Reverse-Current Flow Prevention for a Cell Phone Charger Circuit SBDx4
The ISB-A40-0 incorporates four chips of schottky barrier diodes that are necessary for preventing reverse-current flow in charger circuits. This IC is optimal for high-density mounting and miniaturization of electronic products.
Applications
* Battery charger circuit for portable electronic devices
Features
* Incorporates two chips of 30V/1A and 30V/200mA, respectively. * Miniature package makes this IC ideal for miniaturization of electronic devices and high-density mounting.
Specifications
Maximum Ratings at Ta = 25C
Internal Device D1, D2 Parameter Repetitive peak reverse voltage Average output current D3, D4 Repetitive peak reverse voltage Average output current Allowable power dissipation Symbol VRRM IO VRRM IO PD-D1, 2 PD-D3, 4 Tstg * * Conditions Ratings 30 1.0 30 200 0.55 0.4 -40 to +125 Unit V A V mA W W C
Storage ambient temperature
* Value of an element when mounted on a 40mmx40mmx1.0mm FR4 specified board.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
80807HKIM No.0008-1/4
ISB-A40-0
Electrical Characteristics
Operating Characteristics at Ta = 25C
Internal Device D1, D2 Parameter Reverse voltage Forward voltage Symbol VR VF1 VF2 Reverse current D3, D4 Reverse voltage Forward voltage Reverse current IR VR VF IR Conditions min IR=0.5mA IF=0.7A IF=1.0A VR=16V IR=50A IF=200mA VR=15V 1 30 0.55 5 30 0.45 0.48 1.8 0.51 0.54 15 Ratings typ max V V V A V V A unit
Package Dimensions
unit : mm
2.8 0.75
2.55
MIN
0.6 0.1
0.4 0.5
0.275
0.5
0.5
0.5
1
2 6
3 7 10
4 8 11 15 19
0.5
5 9 12 16
0.5
0.5
13 17
14 18
0.5
0.3
Pin Assignment Diagram
1 5 9 12 16 4 8 11 15 19
1 5 9 12 16 D1-Anode D1-Anode NC D2-Anode D2-Anode D2-Cathode D2-Cathode D2-Cathode D2-Cathode D1-Cathode D1-Cathode D1-Cathode D1-Cathode D4-Anode D3-Cathode D3-Cathode D3-Anode D4-Cathode D4-Cathode 4 8 11 15 19
Equivalent Circuit Diagram
2, 3 6, 7 13, 14 17, 18 4, 8 15, 19
D1
D2
D3
D4
1, 5
12, 16
11
10
No.0008-2/4
ISB-A40-0
10 7 5 3 2 1.0 7 5 3 2
I F - VF
[D1,D2]
10000
I R - VR
125C
100C
[D1,D2]
1000
Reverse Current, IR - A
Forward Current, IF - A
25 C
100
75C
50C
25C
50 C
100 C
75 C
0 C
10
0.1 7 5 3 2 0.01 0
1.0
125 C
-35C
0C
0.1
0.01 0.2 0.4 0.6 0.8 ISB00044 0 10 20 30 40 ISB00045
Forward Voltage, VF - V
1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0 0.2 0.4 0.6
Reverse Voltage, VR - V
1000
I F - VF
[D3,D4]
I R - VR
125C
[D3,D4]
100
Reverse current, IR - A
Forward Current, IF - A
25 C
100C
50
C
10
75C
50C
75 C
0C
1.0
100 C
25C
0.1
125 C
-35C
0C
0.01 0.8 ISB00046 0 10 20 30 40 ISB00047
Forward Voltage,VF - V
0.7
PD max - Ta
Reverse voltage, VR - V
0.5
[D1,D2]
PD max - Ta
[D3,D4]
Power Dissipation, PD max - W
Power Dissipation, PD max - W
0.6 0.55 0.5
Value of an element when mounted on a 40mmx40mmx1.0mm FR4 specified board.
0.4
Value of an element when mounted on a 40mmx40mmx1.0mm FR4 specified board.
0.4
0.3
0.3
0.2
0.2
0.1
0.1 0 0 25 50 75 100 125 150 ISB00048 0 0 25 50 75 100 125 150 ISB00049
Ambient Temperature, Ta -C
Ambient Temperature, Ta -C
No.0008-3/4
ISB-A40-0
ISB Management Department, Custom Module Division, Electronic Device Company, Component & Device Group, SANYO Electric Co., Ltd.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of August, 2007. Specifications and information herein are subject to change without notice.
PS No.0008-4/4

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